HgCdTe photodiodes current-voltage characteristics simulation

K. O. Boltar; N. I. Iakovleva

doi:10.1117/12.517187

30 September 2003 HgCdTe photodiodes current-voltage characteristics simulation

K. O. Boltar, N. I. Iakovleva

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517187
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Different current mechanisms in HdCdTe p-n junctions have been analyzed. Current-voltage characteristics of photodiodes in HdCdTe epitaxial layers formed by different epitaxial methods are measured and simulated. The numerical simulation of photodiodes current-voltage characteristics allows to evaluate HdCdTe material parameters and improve Focal Plane Arrays technology.

Citation Download Citation

K. O. Boltar and N. I. Iakovleva "HgCdTe photodiodes current-voltage characteristics simulation", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517187

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