30 September 2003 Influence of the ionizing irradiation on photoelectric properties of GaSxSe1-x solid solutions
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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003); doi: 10.1117/12.517413
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
The influence of ionizing irradiation of a various kind on photoelectric properties of the GaSxSe1-x (0≤x≤0.25) has been investigated. It is established that hte change of physical properties of researched samples as a result of the influence of the ionizing irradiation is convertible process connected, basically, with effects of ionization and surface effects. It is shown, that these materials can be used as a sensitive element for manufacturing gauges of the ionizing irradiation.
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K. A. Askerov, F. I. Ismaylov, "Influence of the ionizing irradiation on photoelectric properties of GaSxSe1-x solid solutions", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517413; https://doi.org/10.1117/12.517413
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KEYWORDS
Solids

Resistance

Sensors

Chemical elements

Crystals

Selenium

Ionization

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