Influence of ionizing irradiation on the basis characteristics of cooled photoresistors on the basis CdxHg1-xTe

Eldar Y. Salaev; D. Sh. Abdinov; K. A. Askerov

doi:10.1117/12.517417

30 September 2003 Influence of ionizing irradiation on the basis characteristics of cooled photoresistors on the basis Cd_xHg_1-xTe

Eldar Y. Salaev, D. Sh. Abdinov, K. A. Askerov

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517417
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The influence of the ionizing irradiation of different kind on the basic parameters, elements, designs and constructional materials of photoreceivers on the basis of Cd_xHg_1-xTe solid solution have been investigated. It is established, that the change of the basic parameters of the photoresistors is mainly connected with the change of properties of photosensitive elements. It has been shown that these photoreceivers may me used for operating under high irradiation conditions.

Citation Download Citation

Eldar Y. Salaev, D. Sh. Abdinov, and K. A. Askerov "Influence of ionizing irradiation on the basis characteristics of cooled photoresistors on the basis Cd_xHg_1-xTe", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517417

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