Paper
30 September 2003 Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum
Eldar Yu. Salaev, I. R. Nuriev, A. M. Nazarov, S. I. Gadjieva
Author Affiliations +
Abstract
On super high-vacuum installation (≤3÷5•10-9 mm Hg), in quasi-equilibrium conditions by the method of “hot wall”, in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb1-xSnxTe(In)/PbTe1-ySey have been received. Polished plates (100) and quick-spalled sides of BaF2(111) served as substrates. HJ components represent the ideally coordinated pair for the epitaxy in the structural relation. Volt-amper and spectral characteristics of HJ have been registred. The direct branch of VAC at small displacements submits of the exponential law J=J0exp(eU/βκT). At 77 K the coefficient β changes in the interval 1,5÷2, that is characteristic for the generation-recombination mechanism of the current flow through the region of the spatial charge. Maximal photosensitivity is observed at λmax=11,6 micron.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eldar Yu. Salaev, I. R. Nuriev, A. M. Nazarov, and S. I. Gadjieva "Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517396
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Heterojunctions

Epitaxy

Indium

Lead

Selenium

Tin

Mercury

Back to Top