Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum

Eldar Yu. Salaev; I. R. Nuriev; A. M. Nazarov; S. I. Gadjieva

doi:10.1117/12.517396

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30 September 2003 Isoperiodical Pb_1-xSn_xTe(In)/PbTe_1-ySe_y heterojunctions obtained in ultrahigh vacuum

Eldar Yu. Salaev; I. R. Nuriev; A. M. Nazarov; S. I. Gadjieva

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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517396
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

On super high-vacuum installation (≤3÷5•10^-9mm Hg), in quasi-equilibrium conditions by the method of “hot wall”, in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb_1-xSn_xTe(In)/PbTe_1-ySe_y have been received. Polished plates (100) and quick-spalled sides of BaF₂(111) served as substrates. HJ components represent the ideally coordinated pair for the epitaxy in the structural relation. Volt-amper and spectral characteristics of HJ have been registred. The direct branch of VAC at small displacements submits of the exponential law J=J₀exp(eU/βκT). At 77 K the coefficient β changes in the interval 1,5÷2, that is characteristic for the generation-recombination mechanism of the current flow through the region of the spatial charge. Maximal photosensitivity is observed at λ_max=11,6 micron.

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Eldar Yu. Salaev, I. R. Nuriev, A. M. Nazarov, and S. I. Gadjieva "Isoperiodical Pb_1-xSn_xTe(In)/PbTe_1-ySe_y heterojunctions obtained in ultrahigh vacuum", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517396

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