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30 September 2003 Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum
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On super high-vacuum installation (≤3÷5•10-9 mm Hg), in quasi-equilibrium conditions by the method of “hot wall”, in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb1-xSnxTe(In)/PbTe1-ySey have been received. Polished plates (100) and quick-spalled sides of BaF2(111) served as substrates. HJ components represent the ideally coordinated pair for the epitaxy in the structural relation. Volt-amper and spectral characteristics of HJ have been registred. The direct branch of VAC at small displacements submits of the exponential law J=J0exp(eU/βκT). At 77 K the coefficient β changes in the interval 1,5÷2, that is characteristic for the generation-recombination mechanism of the current flow through the region of the spatial charge. Maximal photosensitivity is observed at λmax=11,6 micron.
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Eldar Yu. Salaev, I. R. Nuriev, A. M. Nazarov, and S. I. Gadjieva "Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003);


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