Paper
30 September 2003 LWIR 2×256 focal plane array for time delay and integration
L. D. Saginov, V. N. Solyakov, N. G. Mansvetov, I. D. Bourlakov, K. O. Boltar, E. A. Klimanov
Author Affiliations +
Abstract
A FPA architecture and technology developed by RD&P Center ORION based on planar HgCdTe photodiode arrays and cooled silicon integrated readout circuits is presented. Photovoltaic detectors array made on mercury cadmium telluride (MCT) liquid phase epitaxy (LPE) layer and silicon readout circuits are linked by indium bumps on sapphire interconnection substrate. Cooled silicon readout circuits have been made by n-MOS technology with no TDI stages at focal plane. For 8-12 μm wavelength range detectivity is (5-10)×1010 cmW-1Hz1/2 for 2x256 FPA with two TDI elements.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. D. Saginov, V. N. Solyakov, N. G. Mansvetov, I. D. Bourlakov, K. O. Boltar, and E. A. Klimanov "LWIR 2×256 focal plane array for time delay and integration", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517246
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KEYWORDS
Staring arrays

Silicon

Photodiodes

Sapphire

Liquid phase epitaxy

Indium

Long wavelength infrared

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