Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg<sub>1-x</sub>Cd<sub>x</sub>Te under ion-beam milling

Victor V. Bogoboyashchiy; Igor I. Izhnin

doi:10.1117/12.517392

30 September 2003 Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg_1-xCd_xTe under ion-beam milling

Victor V. Bogoboyashchiy, Igor I. Izhnin

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517392
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

An analysis of the relaxation process for cation defects in Hg_1-xCd_xTe that form in the thermal spike at ion-beam milling (IBM) taking into account the neutral mercury bi-vacancies has been performed. It has been enabled to define a correct expression for concentration of the interstitial mercury created at IBM in the mercury diffusion source that is a boundary condition for equations of the diffusion kinetics. Expressions for depth of the p-n conductivity type conversion in both vacancy-doped p-Hg_1-xCd_xTe and one doped with As, Sb were obtained. There was a good accord between computed dependence of the conversion depth on the ion dose for vacancy-doped Hg_1-xCd_xTe (x≈0.2) with available literature experimental data. This fact well confirm the model adequacy.

Citation Download Citation

Victor V. Bogoboyashchiy and Igor I. Izhnin "Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg_1-xCd_xTe under ion-beam milling", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517392

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