Paper
30 September 2003 Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors)
Vyacheslav A. Kholodnov, Albina A. Drugova
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Abstract
It is demonstrated in theory that saturation of the photoelectric gain G with increasing voltage V across a sample can be suppressed by introducing a vary-band layer near a current contact toward which the minority charge carries are pulled by the electric field. Inter-band mechanisms of photo-generation and recombination of non-equilibrium carriers are supposed. This is realized, for instance, in CdHeTe-based materials widely used for detecting weak optical radiation in the wavelength intervals of λ=8-12μm and λ=3-5μm.
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Vyacheslav A. Kholodnov and Albina A. Drugova "Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors)", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517359
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KEYWORDS
Electrons

Photoresistors

Diffusion

Interfaces

Resistance

Information operations

Night vision

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