30 September 2003 On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation
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Abstract
The results of consistent (beyond the commonly used approximation of quasi-neutrality) theoretical analysis of the efficiency of inter-band photoexcitation of carriers in the case of absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. It is shown that the carrier photoexcitation efficiency can be drasticly increased at the cost of increase in the concentration of recombination centers. Also it is shown that the solution beyond approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.
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Vyacheslav A. Kholodnov, Albina A. Drugova, "On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517361; https://doi.org/10.1117/12.517361
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