30 September 2003 Photoconductivity gain by Si(Ge) p-n junction containing quantum dots
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Si(Ge) junction (of p-i-n diode type) containing Ge of self-assembled quantum dots (SAQD). in a ~0,6 μm-thick near-surface layer were investigated. Analysis of photo- and electrophysical performances allowed to revel ~ 10-103 Iph(V) photocurrent gain by p-n junction at T=78K upon photodiode radiation with the photon energy corresponding to Si and Ge basic interband transitions. A model is proposed which assumes that SAQDs with a positive charge at T=78K turn out to be trapping centers for electrons/ At “forward” voltages on a photodiode (V>0,2), when the p-layer SAQDs are already partially outside the p-n junction, there takes place electron capture on SAQDs as on adhesion centers under conditions of photocarrier optical generation in Si(Ge). In this case, excess concentration of the p-layer electrons forming exsiton-type bound states with quantum dots leads to lowering the p-n junction potential barrier and photocurrent amplification.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Dvurechenskii, A. V. Dvurechenskii, Ivan A. Ryazantsev, Ivan A. Ryazantsev, Anatolii P. Kovchavsev, Anatolii P. Kovchavsev, Georgii L. Kuryshev, Georgii L. Kuryshev, Alexander I. Nikivorov, Alexander I. Nikivorov, Oleg P. Pchelyakov, Oleg P. Pchelyakov, } "Photoconductivity gain by Si(Ge) p-n junction containing quantum dots", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517308; https://doi.org/10.1117/12.517308

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