30 September 2003 Photoconductivity gain by Si(Ge) p-n junction containing quantum dots
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Abstract
Si(Ge) junction (of p-i-n diode type) containing Ge of self-assembled quantum dots (SAQD). in a ~0,6 μm-thick near-surface layer were investigated. Analysis of photo- and electrophysical performances allowed to revel ~ 10-103 Iph(V) photocurrent gain by p-n junction at T=78K upon photodiode radiation with the photon energy corresponding to Si and Ge basic interband transitions. A model is proposed which assumes that SAQDs with a positive charge at T=78K turn out to be trapping centers for electrons/ At “forward” voltages on a photodiode (V>0,2), when the p-layer SAQDs are already partially outside the p-n junction, there takes place electron capture on SAQDs as on adhesion centers under conditions of photocarrier optical generation in Si(Ge). In this case, excess concentration of the p-layer electrons forming exsiton-type bound states with quantum dots leads to lowering the p-n junction potential barrier and photocurrent amplification.
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A. V. Dvurechenskii, A. V. Dvurechenskii, Ivan A. Ryazantsev, Ivan A. Ryazantsev, Anatolii P. Kovchavsev, Anatolii P. Kovchavsev, Georgii L. Kuryshev, Georgii L. Kuryshev, Alexander I. Nikivorov, Alexander I. Nikivorov, Oleg P. Pchelyakov, Oleg P. Pchelyakov, } "Photoconductivity gain by Si(Ge) p-n junction containing quantum dots", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517308; https://doi.org/10.1117/12.517308
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