30 September 2003 Photoelectronics for a new generation of electron-optical equipment
Author Affiliations +
Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003); doi: 10.1117/12.517174
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Results of the latest developments of technologies of photodetectors and photodetective assemblies including multi-element and matrix ones for IR-spectral range were discussed. Technologies for photodetectors based on CMT photodiodes for thermal imaging equipment operating on TDI mode (2×256, 4×288) or in a “staring” mode (384×288) as well as on the basis of photodiodes of indium antimonide received a large development effort. Technologies for manufacturing of high-speed photodetective assemblies for recording of pulse radiation in a wide interval of wavelengths from 0,3 to 11 μm for laser direction finding and metrology are actively developed. An analysis of up-to-date state of photoelectronics was carried out and main physics and technological problems of making photosensitive materials, photosensitive elements, cooling and image processing systems was observed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Ponomarenko, A. M. Filachev, "Photoelectronics for a new generation of electron-optical equipment", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517174; https://doi.org/10.1117/12.517174
PROCEEDINGS
12 PAGES


SHARE
KEYWORDS
Thermography

Sensors

Photodetectors

Lead

Indium

Silicon

Digital signal processing

Back to Top