30 September 2003 Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers
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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003); doi: 10.1117/12.517367
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Polycrystalline layers of Si1-xGex of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures <500°C. The structural properties of the films were studied, the dependences of the resistivity on the temperature and the low-frequency noise were measured. It has been demonstrated that, the temperature coefficient of resistance (TCR) in poly SiGe deposited on different dielectric coverings amounts to (3-4)%/grad and depends on resistance and grain size.
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I. B. Chistokhin, I. P. Michailovsky, B. I. Fomin, E. I. Cherepov, "Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517367; https://doi.org/10.1117/12.517367
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KEYWORDS
Silicon

Resistance

Dielectrics

Germanium

Oxides

Bolometers

Temperature metrology

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