30 September 2003 Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectric
Author Affiliations +
Abstract
Potential barriers in Schottky diodes with a metal-tunnel transparent dielectric based on CdxHg1-xTe (CMT) with x~0.2 have been studied. We used In, Tn, Al and Cr as metal barriers. Superthin dielectric, Al2O3 and fluorine plasma films were deposited between the CMT surface and a metal.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Damnjanovic, V. Damnjanovic, V. P. Ponomarenko, V. P. Ponomarenko, } "Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectric", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517318; https://doi.org/10.1117/12.517318
PROCEEDINGS
9 PAGES


SHARE
Back to Top