Responsivity of multiple quantum well structures grown by MOCVD at normal incidence

Vladimir B. Kulikov; G. H. Avetisyan; L. M. Vasilevskaya; I. D. Zalevsky; I. V. Budkin; A. A. Padalitsa

doi:10.1117/12.517307

30 September 2003 Responsivity of multiple quantum well structures grown by MOCVD at normal incidence

Vladimir B. Kulikov, G. H. Avetisyan, L. M. Vasilevskaya, I. D. Zalevsky, I. V. Budkin, A. A. Padalitsa

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517307
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The success in the area of multiple quantum well (MQW) devices development have been achieved mainly due to employment of molecular beam epitaxy (MBE). However at the same time for MQW growing metalorganic chemical vapor deposition (MOCVD) is used, because of its more high productivity. Our experience in MOCVD grown MQW and photodetectors based on them shows, that they have some differences from MBE grown analogs. These differences are: more high asymmetry of current-voltage characteristics, considerable responsivity at normal incidence. We believe, that differences mentioned above are related with features of MOCVD. In this report we present experimental results of responsivity investigation of MOCVD grown MQW, relation between experimental results and MOCVD grown MQW features is discussed.

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Vladimir B. Kulikov, G. H. Avetisyan, L. M. Vasilevskaya, I. D. Zalevsky, I. V. Budkin, and A. A. Padalitsa "Responsivity of multiple quantum well structures grown by MOCVD at normal incidence", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517307

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