30 September 2003 The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD
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MWIR 128x128 Focal Plane Array (FPA) performance has been investigated. FPA has been fabricated on the base of HgCdTe active layers grown on (111)B GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Histograms and diagrams of photodiodes current, responsivity and detectivity have been plotted for FPA with cutoff value 5,1μm at T=200K.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. O. Boltar, K. O. Boltar, N. I. Iakovleva, N. I. Iakovleva, S. V. Golovin, S. V. Golovin, V. P. Ponomarenko, V. P. Ponomarenko, V. I. Stafeev, V. I. Stafeev, I. D. Bourlakov, I. D. Bourlakov, A. N. Moiseev, A. N. Moiseev, A. P. Kotkov, A. P. Kotkov, V. V. Dorofeev, V. V. Dorofeev, "The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517241; https://doi.org/10.1117/12.517241


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