30 September 2003 The 128x128 and 288x384 InSb array photodetective assemblies for 3- to 5-μm spectral range
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Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003); doi: 10.1117/12.517242
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb - p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384-element p+-on-n diodes formed by Be+-implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6÷8)10-13 W/pixel at 2•10-3 s storage time.
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Vladimir M. Akimov, V. F. Chishko, Alexander I. Dirochka, I. L. Kasatkin, Ye. A. Klimanov, N. V. Kravtchenko, A. A. Lopukhin, V. F. Pasekov, "The 128x128 and 288x384 InSb array photodetective assemblies for 3- to 5-μm spectral range", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517242; https://doi.org/10.1117/12.517242
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KEYWORDS
Photodiodes

Staring arrays

Resistance

Infrared radiation

Mid-IR

Diodes

Multiplexers

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