30 September 2003 The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy
Author Affiliations +
Abstract
Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT heteroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si -substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Varavin, V. S. Varavin, A. K. Gutakovsky, A. K. Gutakovsky, S. A. Dvoretsky, S. A. Dvoretsky, V. A. Kartashev, V. A. Kartashev, A. V. Latyshev, A. V. Latyshev, N. N. Mikhailov, N. N. Mikhailov, D. N. Pridachin, D. N. Pridachin, V. G. Remestnik, V. G. Remestnik, S. V. Rukhlitsky, S. V. Rukhlitsky, I. V. Sabinina, I. V. Sabinina, Yu. G. Sidorov, Yu. G. Sidorov, V. P. Titov, V. P. Titov, V. A. Shvetz, V. A. Shvetz, M. V. Yakushev, M. V. Yakushev, A. L. Aseev, A. L. Aseev, } "The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517366; https://doi.org/10.1117/12.517366
PROCEEDINGS
9 PAGES


SHARE
Back to Top