10 October 2003 Highly spin-polarized electron emission from InGaAlAs strained layer with enlarged effective negative electron affinity
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Proceedings Volume 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2003) https://doi.org/10.1117/12.517427
Event: Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2002, St. Petersburg, Russian Federation
Abstract
Integrated polarization and quantum yield spectra of the electrons, photoemitted from strained AlInGaAs layer, capped by heavily doped thin GaAs quantum well layer, as well as high resolution energy distriubtion curves and a polarization versus energy distribution curves are studied as a function fo light excitation energy and power. The polarization P of up to 83% in conjunction with quantum yield Y=0.5 at T=130K have been measured. At high excitation intensity decrease of Y and P is observed which is attributed to the surface photovoltage effects, i.e. decrease of the negative electron affinity, narrowing of the band-bending region and an increase of the hole concentration in the quatnum well layer. The narrow-band quantum well is shown to provide high effective negative electron afffinity values with no harm to electron polarization.
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Yuri A. Mamaev, Yuri A. Mamaev, Henri-Jean Drouhin, Henri-Jean Drouhin, G. Lampel, G. Lampel, Arsen V. Subashiev, Arsen V. Subashiev, Yuri P. Yashin, Yuri P. Yashin, Alexander Roshchansky, Alexander Roshchansky, "Highly spin-polarized electron emission from InGaAlAs strained layer with enlarged effective negative electron affinity", Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); doi: 10.1117/12.517427; https://doi.org/10.1117/12.517427
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