Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process

Kirill L. Safonov; Dmitri V. Kulikov; Yuri V. Trushin; Joerg Pezoldt

doi:10.1117/12.517950

10 October 2003 Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process

Kirill L. Safonov, Dmitri V. Kulikov, Yuri V. Trushin, Joerg Pezoldt

Proceedings Volume 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2003) https://doi.org/10.1117/12.517950
Event: Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2002, St. Petersburg, Russian Federation

Abstract

Rate equations approach of computer simulation has been applied to investigate the SiC clusters nucleation and growth on Si surface during molecular beam epitaxy. Cluster surface densities have been obtained for a range of temperatures. The temperature influence on the consequent clusters density, including the surface phase transition (which occurs with simultaneous structure reconstruction), has been determined. The results obtained by the application of the suggested physical model have appeared to be in the reasonable agreement with experimental data.

Citation Download Citation

Kirill L. Safonov, Dmitri V. Kulikov, Yuri V. Trushin, and Joerg Pezoldt "Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process", Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); https://doi.org/10.1117/12.517950

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