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17 June 2003 Electrical conductivity of surface phases on silicon
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Proceedings Volume 5129, Fundamental Problems of Optoelectronics and Microelectronics; (2003) https://doi.org/10.1117/12.502396
Event: Fundamental Problems of Optoelectronics and Microelectronics, 2002, Vladivostok, Russian Federation
Abstract
Electrical conductivity of surface phases on silicon have been studied in ultrahigh vacuum at room temperature by four-point probe method. It has been shown that surface conductance of silicon substrate strongly depends on crystal and electronic structure of surface phases, surface morphology and density of atoms involved in surface phases formation. The atom adsorption, structural and morphological transformation lead to changing of long-order structure of surface phases and consequently in decreasing of electrical conductivity. It is shown that surface phases as new ultrathin 2D material presents additional conducting channel on silicon substrate and is believed to be promising in microelectronics technology.
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Dmitry A. Tsukanov, Sergey V. Ryzhkov, Igor A. Belous, Oleg A. Utas, and Victor G. Lifshits "Electrical conductivity of surface phases on silicon", Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); https://doi.org/10.1117/12.502396
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