17 June 2003 Photoinduced changes of optical constants in the chalcogenide vitreous semiconductors
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Proceedings Volume 5129, Fundamental Problems of Optoelectronics and Microelectronics; (2003) https://doi.org/10.1117/12.502389
Event: Fundamental Problems of Optoelectronics and Microelectronics, 2002, Vladivostok, Russian Federation
Abstract
The photoinduced changes of optical constants in As2S3 films were experimentally studied according to the wave length of initiating radiation at different exposure temperatures. It was determined that the irradiation leads not only to shift but also to change in a slope of the Urbach absorption margin. It was shown that the basic experimental relationships describing the photoinduced changes of optical constants conform with a model of heterogenous medium with a local heating of microareas.
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V. I. Ivanov, V. I. Ivanov, Yu. M. Karpets, Yu. M. Karpets, S. R. Simakov, S. R. Simakov, } "Photoinduced changes of optical constants in the chalcogenide vitreous semiconductors", Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); doi: 10.1117/12.502389; https://doi.org/10.1117/12.502389
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