NGL Mask Technology
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UV light with oxygen treatment of phase shift photoblank for phase and transmission control: applicable to MxSi(1-x)OyN(y-1)
Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process
Identification of defect source to control reticle defect density for CAR and dry etching in the photomask process
Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification
Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography
Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond