28 August 2003 Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504184
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
For the latest photomask fabrication, better critical dimension (CD) control and pattern fidelity to design size are required. According to the latest ITRS roadmap, masks for the 90 nm technology node should have CD uniformity of 6~8nm (3σ). Moreover, CD control is particularly critical for isolated opaque lines, such as those found in gate layers, whose loading is primarily clear field. The high acceleration voltage electron beam (EB) systems that employ variable shaped beams (VSBs) are used for mask writing due to their high throughput. To minimize write time and fogging effects, and to control mean CD and improve CD uniformity for mask production, it is well known that negative tone resists enable better VSB mask writing system performance. In these circumstances, positive and negative tone chemically amplified resists (CARs), FEP171 (Fuji Films) and FEN270 (Fuji-Films), were evaluated empirically for mask making. We investigated and compared resolution, sensitivity, resist profiles, CD variation vs. exposure dose, proximity effect correction (PEC), fogging effect, pattern fidelity, and so on. Furthermore, write tool data volume and throughput, defect trends, and other process parameters on the positive and negative tone resists were evaluated and compared by applying test patterns.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Woo-Gun Jeong, Woo-Gun Jeong, Dong-Il Park, Dong-Il Park, Eui-Sang Park, Eui-Sang Park, Sun-Kyu Seo, Sun-Kyu Seo, Hyuk-Joo Kwon, Hyuk-Joo Kwon, Jin-Min Kim, Jin-Min Kim, Sung-Mo Jung, Sung-Mo Jung, Sang-Soo Choi, Sang-Soo Choi, } "Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504184; https://doi.org/10.1117/12.504184
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