28 August 2003 Comparison of new film nozzle with standard nozzle for aqueous puddle developing of photomasks
Author Affiliations +
Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504190
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
With shrinking feature sizes there is a growing demand for improved uniformity values and defect levels especially for aqueous develop during photomask processing. Standard nozzle systems with discrete dispense channels for applying the developer medium onto the photomask surface may cause non-uniformities. This results in characteristic imprints in CD-uniformity reflecting the nozzle design used during the develop process step. These can lead on the one hand to an increased number and various types of defects and on the other hand to variations in CD-uniformity. A new puddle nozzle design for the STEAG HamaTech's ASP5500 has been developed to address this issue. Instead of discrete dispense holes the developer medium is applied onto the substrate surface by a full-width film. This media film is applied uniform across the substrate and has low impact onto the photomask surface. By combining the new nozzle design with gas-less high volume dispense pumps a very uniform and defect-free dispense can be achieved. The uniformity and defect performance of the new film nozzle will be presented and compared to a standard dispense nozzle system. The study has been done on masks with Chemically Amplified Resist (CAR).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Buergel, Christian Buergel, Werner Saule, Werner Saule, M. Strobl, M. Strobl, Peter Dress, Peter Dress, Anatol Schwersenz, Anatol Schwersenz, Martin Tschinkl, Martin Tschinkl, "Comparison of new film nozzle with standard nozzle for aqueous puddle developing of photomasks", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504190; https://doi.org/10.1117/12.504190

Back to Top