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28 August 2003 Complementary splitting with stress emulation for stencil masks
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504071
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
The practical methods for splitting line-and-space (LS) patterns and large rectangles into two complementary portions have been developed for the fabrication of stencil masks. The critical length for LS patterns can be determined from the finite-element modeling of the patterns under the external force acting up them in the wet cleaning of the mask. The optimal way of placing the split portions over the mask has also been demonstrated. On the other hand, a large pattern should be split in a step larger than half the shorter side of the figure. Since the methods are based on the simple and fast modeling, the flexible criteria as a function of design rule can be set in the splitting algorithm.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohichi Nakayama, Kazuharu Inoue, Isao Ashida, Shinji Omori, and Hidetoshi Ohnuma "Complementary splitting with stress emulation for stencil masks", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504071
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