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28 August 2003 Controlling defocus impact on OPC performance
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504380
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Variations in manufacturing process introduce uncertainties in model based optical proximity correction. Discrepancies may arise between the model description and the actual manufacturing condition. Optimal mask correction should minimize the sensitivity of line width variation as the lithography process variables change within the accepted range. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of test patterns and on real circuit layout. We propose to control defocus effect by design centering and physical model-based verification.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinichi Takase and Qi-De Qian "Controlling defocus impact on OPC performance", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504380
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