The KrF12% tri-tone PSM (phase shift mask) was designed with the programmed defects on the chrome (Cr) and phase shift (PS) layers. From the lithography simulation, the PS defects, generated on the PS layer, were estimated to fluctuate the CD of the contact holes on the wafer more than the defects in the same size on the conventional EAPSM (half-tone PSM). The printability of the PS defects and Cr defects on the contact holes were investigated by the print-test on the wafer. The Cr residues on the PS layer slightly changed the CD of the contact holes on the wafer. The PS defects showed the great influence to the CD variation of the contact holes. The light calibration of the defect inspection was optimized to detect the PS and Cr defects. For the detection of the PS defects in the die-to-die inspection mode, the UV inspection system SLFX7 showed the high performance with the PS/SiO2 calibration, in which the boundary of the PS layer and SiO2 substrate was used as the light calibration point. The SLFX7 also available to detect the Cr defects in the die-to-die mode. For the die-to-database mode to detect the Cr defect, the KLA351, the visible light inspection system, was available by the Cr/PS calibration. The sensitivity of the SLFX7 and KLA351 was adequate for the Cr defects, however, that was not enough to the specification of the PS defects estimated from the print-test. The sensitivity of the SLFX7 showed a slight difference between the tri-tone and binary layout in the specific defect types.