28 August 2003 Development of an e-beam lithography system for 100- to 90-nm node reticles
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504261
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
A new advanced electron beam lithography system JBX-3030MV has been developed to meet requirements for the production of masks for 100-90nm technology node. The system features a variable shaped beam, 50kV accelerating voltage, a step-and-repeat stage, and incorporates new technologies. These include a high resolution-high current density electron optical system, triangle beam shaping system, higher speed electro static beam deflection system, higher accuracy proximity effect correction system, and glass in glass out material handling system. The writing accuracy of the system has satisfied the specifications required for the production of 100-90nm node reticles with extendibility of 65nm node reticles.
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Tadashi Komagata, Tadashi Komagata, Yuichi Kawase, Yuichi Kawase, Yasutoshi Nakagawa, Yasutoshi Nakagawa, Nobuo Gotoh, Nobuo Gotoh, Kazumitsu Tanaka, Kazumitsu Tanaka, } "Development of an e-beam lithography system for 100- to 90-nm node reticles", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504261; https://doi.org/10.1117/12.504261
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