Paper
28 August 2003 Development of attenuating PSM shifter for F2 and high-transmission ArF lithography
Osamu Nozawa, Yuki Shiota, Hideaki Mitsui, Toshiyuki Suzuki, Yasushi Ohkubo, Masao Ushida, Satoshi Yusa, Toshiharu Nishimura, Kenji Noguchi, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi
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Abstract
A new att-PSM shifter for both F2 and high-transmittance ArF lithography was developed. This shifter consists of SiON / TaHf in stacked layers. SiON for phase shift layer has a moderate transmittance and refractive index, and has sufficient laser durability. The TaHf film, which is a transmittance control layer, was effective as a functional layer in mask dry etching. Adopting the 3 step etching procedure, low damage of the quartz surface and less impact to CD shift was realized. It was confirmed that a new shifter has also sufficient feasibility to the mask inspection and repair process.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Nozawa, Yuki Shiota, Hideaki Mitsui, Toshiyuki Suzuki, Yasushi Ohkubo, Masao Ushida, Satoshi Yusa, Toshiharu Nishimura, Kenji Noguchi, Shiho Sasaki, Hiroshi Mohri, and Naoya Hayashi "Development of attenuating PSM shifter for F2 and high-transmission ArF lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504047
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Cited by 5 scholarly publications.
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KEYWORDS
Transmittance

Etching

Dry etching

Chromium

Fluorine

Photomasks

Inspection

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