28 August 2003 Development of attenuating PSM shifter for F2 and high-transmission ArF lithography
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504047
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
A new att-PSM shifter for both F2 and high-transmittance ArF lithography was developed. This shifter consists of SiON / TaHf in stacked layers. SiON for phase shift layer has a moderate transmittance and refractive index, and has sufficient laser durability. The TaHf film, which is a transmittance control layer, was effective as a functional layer in mask dry etching. Adopting the 3 step etching procedure, low damage of the quartz surface and less impact to CD shift was realized. It was confirmed that a new shifter has also sufficient feasibility to the mask inspection and repair process.
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Osamu Nozawa, Osamu Nozawa, Yuki Shiota, Yuki Shiota, Hideaki Mitsui, Hideaki Mitsui, Toshiyuki Suzuki, Toshiyuki Suzuki, Yasushi Ohkubo, Yasushi Ohkubo, Masao Ushida, Masao Ushida, Satoshi Yusa, Satoshi Yusa, Toshiharu Nishimura, Toshiharu Nishimura, Kenji Noguchi, Kenji Noguchi, Shiho Sasaki, Shiho Sasaki, Hiroshi Mohri, Hiroshi Mohri, Naoya Hayashi, Naoya Hayashi, } "Development of attenuating PSM shifter for F2 and high-transmission ArF lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504047; https://doi.org/10.1117/12.504047
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