28 August 2003 Development of pellicle for F2(157-nm) excimer laser
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504266
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Because 157 nm light energy is two or more times of C-C bonding energy, the main bonding of organic materials, pellicle membrane material decomposes if it absorbs light at 157 nm. Therefore, in order to ensure the durability of the pellicle membrane, it is very important that the membrane material absorbs 157 nm light as little as possible. We researched high transmittance polymers at 157 nm by using simulation technology. In conclusion, we estimated that polymers with high transmittance at 157 nm are possible, and several companies were asked to develop it. As a result, we obtained a polymer in which 157 nm transmittance is 98.5% at 0.8 um [157 nm absorbance is 0.008 um-1, 10 base] from Asahi Glass Co., Ltd. We carried out various 157 nm irradiation tests by using the above polymer, and obtained the result showing durability of 15 J/cm2 in nitrogen + 1000 ppm oxygen environment. Furthermore, we examined the environment during F2 Excimer Laser irradiation and found that transmittance loss of membrane and also oxygen addition quantity to irradiation environment may be improved substantially by adopting irradiation environment of Helium.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeto Shigematsu, Shigeto Shigematsu, Toshihiko Nakano, Toshihiko Nakano, H. Shigemoto, H. Shigemoto, Masahiro Kondo, Masahiro Kondo, Hiroaki Nakagawa, Hiroaki Nakagawa, H. Sasaki, H. Sasaki, Iwao Higashikawa, Iwao Higashikawa, "Development of pellicle for F2(157-nm) excimer laser", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504266; https://doi.org/10.1117/12.504266
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