Translator Disclaimer
28 August 2003 GDS2NEO: high-compression data processing system for a new EB handling format
Author Affiliations +
Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504272
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Recently as the node size gets smaller into deep sub-micron, both chip designers and mask manufacturers have faced great problems as follows: (1) Explosion of the data size; (2) Further data complexity due to OPC or PSM; (3) Increasing numbers of data formats. Since these problems directly lead to the increase of the mask costs, we have thought that they need to be overcome from the viewpoint of data processing as well. Selete have made a proposal of a next generation EB handling format, called 'NEO', in order to cope with these issues. The greatest feature of NEO is its compaction capability of the data description and it is expected that the chip data size could be reduced far smaller than in any other existing EB formats. We have been working on the NEO project in cooperation with Selete and developed a new system 'GDS2NEO', which converts the conventional layout data described in GDSII to the NEO-formatted data. We also investigated the compaction efficiency of NEO with several sets of actual layout data using GDS2NEO. As the result, we have proved that NEO has an excellent efficiency of data compaction and GDS2NEO has achieved a satisfactory performance of data conversion. In this paper we present the concept of NEO format, the data processing flow and the basic algorithm of GDS2NEO, the experimental results and the future plans.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidemuchi Kawase, Tomoko Kamimoto, Hiroji Ogasawara, Koki Kuriyama, Junji Hirumi, and Nobuyuki Yoshioka "GDS2NEO: high-compression data processing system for a new EB handling format", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504272
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top