28 August 2003 Impact of OPC aggressiveness on mask maufacturability
Author Affiliations +
Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504253
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
In recent low-k1 lithography, OPC is required to generate more aggressively fragmented patterns to keep its pattern fidelity on the LSI devices. But over-aggressive OPC might induce a crisis of mask manufacturability. In this paper, using newly defined parameter, DPF (Degree of Pattern Fidelity), quantitative relations between OPC aggressiveness and pattern fidelity are evaluated under several conditions. Next, the concept of MEF is extended for 2D complex patterns using DPF, and is evaluated as a function of OPC aggressiveness. Other mask manufacturability, such as writing time, data volume, and inspection availability would be evaluated as a function of OPC aggressiveness.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Tanaka, Satoshi Tanaka, Soichi Inoue, Soichi Inoue, Toshiya Kotani, Toshiya Kotani, Kyoko Izuha, Kyoko Izuha, Ichiro Mori, Ichiro Mori, } "Impact of OPC aggressiveness on mask maufacturability", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504253; https://doi.org/10.1117/12.504253
PROCEEDINGS
10 PAGES


SHARE
Back to Top