28 August 2003 Initial capability of new photomask-blank deposition tool
Author Affiliations +
Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504179
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
In a joint-development, Rohwedder and Osmic have designed and built a low-defect dual-ion beam reactive-sputtering tool. The tool has been specifically targeted for developing low-defect lithography mask photoblank coatings intended as DUV absorbers and phase-shifting films. The Osmic/Rohwedder collaboration will continue into NGL -- the present tool also serves as an R&D platform for EUVL mask blanks. The deposition tool and robotic substrate handler have been integrated and delivered to Osmic in the 2nd quarter of 2003. In this paper, we present initial capability for production of thin-film lithography coatings, including spectrophotometric performance, defect levels and film uniformity. Future reports will share results from more in-depth process development and optimization.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael D. Kriese, Michael D. Kriese, James L. Wood, James L. Wood, James R. Rodriguez, James R. Rodriguez, Gary Fournier, Gary Fournier, David L. Thompson, David L. Thompson, David Mercer, David Mercer, Jason A. Gass, Jason A. Gass, Dale E. Mauldin, Dale E. Mauldin, } "Initial capability of new photomask-blank deposition tool", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504179; https://doi.org/10.1117/12.504179
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

EUVL mask blank repair
Proceedings of SPIE (June 30 2002)
Initial results of new photomask-blank deposition tool
Proceedings of SPIE (December 16 2003)
Current status of Mo Si multilayer formation in ASET for...
Proceedings of SPIE (October 19 2006)

Back to Top