28 August 2003 Investigation on micro-trench formation of alternating aperture phase shift masks
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504175
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Phase Shift Masks (PSMs) have been widely used in the photomask industry for nowadays. Among several types of PSMs, Alternating Aperture PSM (AAPSM) allows for better resolution within other advantages. This paper deals with micro-trench formation during quartz etching. Micro-trench can produce distortion of the light intensity and lead unwanted results on wafer. Several experiments are performed with respective etch conditions; fluorine (F) gas species, gas flow rates, bias powers, and substrate temperatures while other conditions are fixed. Quartz etching is processed with Inductively Coupled Plasma (ICP) system. Etched morphologies are observed by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and a surface profiler to select the best condition as functions of etch parameters. Results show that bias power is the most important factors to decide quartz surface morphologies. Finally, mask image is simulated by AIMS system under given condition.
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Sung-Won Kwon, Sung-Won Kwon, Heong-Sup Jeong, Heong-Sup Jeong, Lee-Ju Kim, Lee-Ju Kim, Chang-Nam Ahn, Chang-Nam Ahn, Hong-Seok Kim, Hong-Seok Kim, } "Investigation on micro-trench formation of alternating aperture phase shift masks", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504175; https://doi.org/10.1117/12.504175
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