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28 August 2003 Negative chemically amplified resist in making mask for a logic device with high pattern density
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504188
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Recently there has been significant interest in the using of chemically amplified (CA) resists for the mask making industry because of their high sensitivity, high contrast, and good dry etch resistance. Especially positive CA resists with high acceleration voltage E-beam systems are being become the main stream of making for advanced masks. However, the positive CA resists often make the issue of the CD uniformity degradation by the fogging effect at a high acceleration voltage (50keV) E-beam writing tool as writing for masks, which are having a high pattern density. In previous our paper, we have already confirmed that a positive CA resist shows the CD uniformity error more than 30nm by the fogging effect at the mask which is having above 40% pattern density, even if its CD uniformity error value is smaller than 50nm of ZEP. In this paper, we have described and studied for the performances of the negative CA resist at the 50keV e-beam writing tools in advanced mask making like logic device with high pattern density and we have compared with a positive CA resist at the 50keV e-beam writing tools. Furthermore, we have confirmed that the negative CA resist have an advantage what is in advanced mask making process like logic device masks with high pattern density at 50keV e-beam writing tool and they have been compared with the positive CA resist.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyung-Han Nam, Hyun-Joon Cho, Seung Hee Baek, Seong-Ho Jeong, Chang-Nam Ahn, and Hong-Seok Kim "Negative chemically amplified resist in making mask for a logic device with high pattern density", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504188
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