New repair of clear defects on half-tone PSM using Ga implantation

Yoshikazu Nagamura; Itaru Kanai; Koji Tange; Kunihiro Hosono; Koki Hayashi; Hidehiro Ikeda; Susumu Nagashige; Mikio Ishijima; Hironobu Iwasaki; Yasutaka Kikuchi

doi:10.1117/12.504208

28 August 2003 New repair of clear defects on half-tone PSM using Ga implantation

Yoshikazu Nagamura, Itaru Kanai, Koji Tange, Kunihiro Hosono, Koki Hayashi, Hidehiro Ikeda, Susumu Nagashige, Mikio Ishijima, Hironobu Iwasaki, Yasutaka Kikuchi

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504208
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

The new repair of the clear defects on the half-tone PSM (EAPSM) was proposed. The Ga (gallium) ions were implanted by the FIB on the area adjacent to the carbon films formed on the clear defects. The Ga ion implanted area on the SiO₂ substrate showed the semi-transparency at the KrF and ArF wavelengths. The lithography simulations of the layouts designed for the defect-repaired area endorsed the concept of the new repair. The Ga ion implantation was optimized to the new repair by using the AIMS and AFM measurements for the transmittance and etched depth of the SiO₂ surface. The authors applied this method to the clear defects programmed on the KrF and ArF EAPSMs. The AIMS analysis showed that the deviation of the CD (critical dimension) of the defect-repaired regions on the wafer was within +/-5% to the non-defective reference at every defocused point. The new repair moderated the specification of the edge placement accuracy of the FIB processing compared to the conventional carbon film deposition.

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Yoshikazu Nagamura, Itaru Kanai, Koji Tange, Kunihiro Hosono, Koki Hayashi, Hidehiro Ikeda, Susumu Nagashige, Mikio Ishijima, Hironobu Iwasaki, and Yasutaka Kikuchi "New repair of clear defects on half-tone PSM using Ga implantation", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504208

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