28 August 2003 On-site use of 1x stencil mask: control over image placement and dimension
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504258
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
We propose the efficient on-site use of a 1x stencil mask for proximity electron lithography (PEL) for controlling image placement (IP) and critical dimension (CD). It has been demonstrated that the integrated approach to the IP-error correction on the mask-fabrication level using the data manipulation and the mask-exposure level using the deflection of an electron beam (EB) can meet the requirement for the overlay accuracy in the 65-nm technology node. Also, the time-dependent variation in mask CD due to EB-assisted contamination growth can be managed by using the combination of the dose control and the periodic dry cleaning of the mask.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinji Omori, Shinji Omori, Kazuya Iwase, Kazuya Iwase, Yoko Watanabe, Yoko Watanabe, Keiko Amai, Keiko Amai, Takayuki Sasaki, Takayuki Sasaki, Shoji Nohama, Shoji Nohama, Isao Ashida, Isao Ashida, Shigeru Moriya, Shigeru Moriya, Tetuya Kitagawa, Tetuya Kitagawa, } "On-site use of 1x stencil mask: control over image placement and dimension", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504258; https://doi.org/10.1117/12.504258
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