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28 August 2003 PSM quartz etch depth evaluation with an atomic force microscope
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003)
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
As it is becoming clear that the 65nm node lithography would have no other alternative than "193nm" reinforced with all the possible RETs, "tricky" masks such as Alternating PSMs, Chromeless masks, or Enhancer masks might become inevitable. Most of the "tricky" masks will need the quartz substrate to be etched to give the phase shift. This means that an etching process without an etch-stop or an interface between different materials should be applied. We evaluated Qz etching process and optimized etching condition. Phase shift measurement system (λ 248 nm) and atomic force microscope were used for our measuring Qz depth and profile. And we can measure narrow space to 0.2 um size. As a result of optimized condition, Qz depth uniformity is 3sigma 1.5%, cross section is vertical sidewall and rectangular corner, and linearity error is 4.5% with isolated space and 9.0% at hole. And, we checked this linearity error does not affect so much to wafer printing, using aerial software simulation.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Noguchi, Shiho Sasaki, Yuuichi Yoshida, Takashi Adachi, Tsukasa Abe, Hiroshi Mohri, Haruo Kokubo, Yasutaka Morikawa, and Naoya Hayashi "PSM quartz etch depth evaluation with an atomic force microscope", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504065;

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