28 August 2003 Pattern-dependence optical phase effect on alternating phase shift mask
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504284
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
A comprehensive study of alternating phase shifting mask (Alt-PSM) including mask making, 3-dimensional aerial image simulation, and wafer printing is reported in this paper. For the mask making, we found that the micro-loading effect will be greatly improved using the etching recipe with high Reactive Ion Etching (RIE) power and low Inductively Coupled Plasma (ICP) power. However, this recipe has side effects of Cr film damage and rough quartz side wall. Due to the 3-dimensional mask complex effect, the optimal phase difference is not simply π calculated using optical path difference but is varied with mask features. The optimal phase difference is 165° other than 180° for hole patterns, while it is 176° for line-and-space patterns. The micro-loading effect with variant 2-dimensional complexities is also studied in this paper.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bin-Chang Chang, Bin-Chang Chang, Jan-Wen You, Jan-Wen You, Ming Lu, Ming Lu, Chiu-Lien Lee, Chiu-Lien Lee, Li-Wei Kung, Li-Wei Kung, King-Chang Shu, King-Chang Shu, Jaw-Jung Shin, Jaw-Jung Shin, Tsai-Sheng Gau, Tsai-Sheng Gau, Burn-Jeng Lin, Burn-Jeng Lin, } "Pattern-dependence optical phase effect on alternating phase shift mask", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504284; https://doi.org/10.1117/12.504284

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