28 August 2003 Pattern inspection of EUV mask using an EUV microscope
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504240
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
It is proposed that at-wavelength EUV mask inspection system based on EUV microscope, which is the best way to observe the mask directly. Using this system, preliminary experiments to examine the pattern inspection of EUVL mask is carried out. EUV microscope has a capability to resolve 50 nm lithographic node finished EUVL mask. We confirmed that at-wavelength microscope rather than SEM is both powerful and useful for evaluating the mask fabrication process for EUVL. Furthermore, it is find out that the contrast of the mask images observed by EUVM influenced by the absorber material. As the result, important information of the finished EUVL mask can be obtained utilizing EUVM, which is very important tool for the finished EUVL mask inspection.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeo Watanabe, Takeo Watanabe, Tsuneyuki Haga, Tsuneyuki Haga, Tsutomu Shoki, Tsutomu Shoki, Kazuhiro Hamamoto, Kazuhiro Hamamoto, Shintaro Takada, Shintaro Takada, Naoki Kazui, Naoki Kazui, Satoshi Kakunai, Satoshi Kakunai, Harushige Tsubakino, Harushige Tsubakino, Hiroo Kinoshita, Hiroo Kinoshita, } "Pattern inspection of EUV mask using an EUV microscope", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504240; https://doi.org/10.1117/12.504240

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