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28 August 2003 Photomask defect tracing, analysis, and reduction with chemically amplified resist process
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504189
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
The features of optical proximity correction are becoming very aggressive as production technology migrates into 90nm/130 nm regime. The complicated optical proximity correction (OPC) patterns often result in un-repairable defects, a major yield loss mechanisms in a mask production line. Defect control is increasingly important. A methodology for identifying defect sources and reduction is demonstrated in this paper. The mechanisms and causes of defect formation could be determined with corresponding process step on the strength of sequence inspections. The cause of half-etched opaque defect on negative CAR process was found from PR fragment contamination of e-beam exposure step. After clean-up of e-beam chamber, yield was increased over 20%. Big pinhole defect and contact of AttPSM positive process was found on ADI step. The possible cause was poor CAR adhesion. These two type defects were decreased by modification of developing recipe, special on rinse step. Design experiment with Taguchi method was used to optimize the interactive recipe of plasma descum and rinse step on developing step of implanted layer. Average defect density was decreased from 0.99 to 0.27, and percentage of zero defect rate has been increased from 29.5 to 63.3%.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng-ming Lin, Rick Lai, W. H. Huang, B. C. Wang, C. Y. Chen, C. H. Kung, Chue-San Yoo, Jieh-Jang Chen, and Sheng-Cha Lee "Photomask defect tracing, analysis, and reduction with chemically amplified resist process", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504189
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