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28 August 2003 Practical approach for AAPSM image imbalance correction for sub-100-nm lithography
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504393
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
In our previously published work, we investigated alternating-aperture PSM image intensity imbalance as function of various mask and optical parameters using rigorous electro-magnetic field (EMF) simulations. Results suggested that the imbalance could be effectively compensated through application of an optimized combination of undercut and a constant phase-shifter bias. In the effort of development and implementation of a production-ready image imbalance correction methodology, it is important to validate the accuracy of simulation-based predictions through correlation of results to experimental data. For this purpose, a test reticle containing various mask parameters as variables was designed and manufactured. The experimental data was obtained from SEM measurements of the exposed wafers, and results were compared to rigorous EMF simulation data. Based on results obtained, we propose and validate an image imbalance correction methodology to be implemented within the framework of the PSM - OPC manufacturing flow.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung Lin Cho, Shu Yi Lin, Frank Hsieh, Armen Kroyan, Hua-Yu Liu, Jason H. Huang, Shu-Hao Hsu, I-Hsiung Huang, Benjamin Szu-Min Lin, and Kuei-Chun Hung "Practical approach for AAPSM image imbalance correction for sub-100-nm lithography", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504393
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