Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification

Fumio Murai; Hiroshi Fukuda; Shigeki Mori; Akio Sato; Kyoji Nakajo

doi:10.1117/12.504235

28 August 2003 Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification

Fumio Murai, Hiroshi Fukuda, Shigeki Mori, Akio Sato, Kyoji Nakajo

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504235
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

In electron-beam projection lithography (EPL), the proximity effect is more complicated than in conventional direct electron-beam writing. The correction of this effect uses pattern-shape modification because dose adjustment is not possible. Moreover, large sub-field transcription produces non-uniform beam blur due to optical aberration and local and global Coulomb effects. This large beam blur requires sophisticated correction depending on pattern features and layout over a very short range as well as pattern density over a backscattering range. In response to these issues, the authors have developed a flexible and precise correction method for the proximity effect under various conditions of beam blur, LSI process, and pattern arrangement. It features (1) multiple pattern-area-density maps, (2) look-up tables classified by pattern features and layout, and (3) a fast calculation algorithm for the iteration process of optimal bias. The developed method (running on four PCs with 2.4-GHz CPUs) attains a processing time of 55 min by using a bias map for 12-GB LSI flat data in 2000 sub-fields. An example of pattern classification by this method showed the usefulness of pattern bias for each individual pattern edge over a short range. It is concluded that the developed correction method is useful not only for proximity effects, including the Coulomb effect, but also for various process effects in mask making with precise CD control.

Citation Download Citation

Fumio Murai, Hiroshi Fukuda, Shigeki Mori, Akio Sato, and Kyoji Nakajo "Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504235

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KEYWORDS

Image classification

Backscatter

Data processing

Data corrections

Electron beams

Optical aberrations

Double patterning technology

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