LEEPL is a new electron beam exposure technology proposed in 1999. But, fundamental technologies used for LEEPL had been proposed and proved over the past one or two decades. By using existing technologies effectively, LEEPL can be developed in a short period. Fortunately, contact holes less than 100nm are required for 65nm-node lithography. We have the specific target for early implementation of the device fabrication. This paper describes the imaging capability, the image placement accuracy and the process application.