28 August 2003 State-of-the-art performance of stencil mask for LEEPL
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504273
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
The critical-dimension (CD) performance and the printability of 1x stencil masks used for low-energy electron-beam proximity-projection lithography (LEEPL) have been studied by using the LEEPL β-tool. The CD uniformity and the line edge roughness on the mask are 6.0 nm and 3.5 nm in 3σ, respectively. It has been found that the fidelity of the etching process is so high that the optimization of the electron-beam writing process is critical to perforate high-quality patterns. The mask error enhancement factor evaluated over 80-100 nm lies is nearly unity, demonstrating the excellent fidelity of image transfer from the mask to a wafer. The critical defect sizes are 14.5 and 22.8 nm for the protrusions on the edges of 100-nm lines and the 150-nm contact holes respectively, implying that defect inspection is a challenge. The current achievements and the final targets in the 65-nm node are compared to assess the gap that must be bridged.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shoji Nohama, Shinji Omori, Kazuya Iwase, Yoko Watanabe, Keiko Amai, Takayuki Sasaki, Shigeru Moriya, Tetuya Kitagawa, "State-of-the-art performance of stencil mask for LEEPL", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504273; https://doi.org/10.1117/12.504273
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