Control of ferromagnetism in Cd1-xMnx Te quantum wells

S. Tatarenko; M. Bertolini; W. Maslana; H. Boukari; B. Gilles; J. Cibert; D. Ferrand; P. Kossacki; Jan A. Gaj

doi:10.1117/12.519671

22 October 2003 Control of ferromagnetism in Cd_1-xMn_xTe quantum wells

S. Tatarenko, M. Bertolini, W. Maslana, H. Boukari, B. Gilles, J. Cibert, D. Ferrand, P. Kossacki, Jan A. Gaj

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519671
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

New structures aiming at controlling ferromagnetic properties of Diluted Magnetic Semiconductors quantum wells are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting a distance between quantum well and surface. Surface doping was successfully applied to obtain samples with CdMnTe quantum well with up to 9.3% Mn concentration.

Citation Download Citation

S. Tatarenko, M. Bertolini, W. Maslana, H. Boukari, B. Gilles, J. Cibert, D. Ferrand, P. Kossacki, and Jan A. Gaj "Control of ferromagnetism in Cd_1-xMn_xTe quantum wells", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519671

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available