22 October 2003 DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods
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Abstract
In this paper we report the result of investigation of the electrical transport in PLD grown n-PbSe/n-Si heterojunction by DC and AC current measurement techniques. This characterization method is a well-suited and simple technique to study the interface between two semiconductors. The Si substrates are highly doped (ρ = 0.45 Ωcm), and consequently most of the heterojunction depletion layer falls in the PbSe epilayer. Fabrication of PbSe thin films on Si substrates by the pulsed laser deposition(PLD) method has been demonstrated. The films were characterized by X-ray diffraction analysis.
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Waclaw Bala, Waclaw Bala, Roman Rumianowski, Roman Rumianowski, Andrzej Korcala, Andrzej Korcala, Zygmunt Turlo, Zygmunt Turlo, } "DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519672; https://doi.org/10.1117/12.519672
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