High-power quantum cascade lasers (QCLs) grown by GasMBE

Manijeh Razeghi; Steven Slivken

doi:10.1117/12.519745

22 October 2003 High-power quantum cascade lasers (QCLs) grown by GasMBE

Manijeh Razeghi, Steven Slivken

Author Affiliations +

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519745
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers produced at the Centre for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Recent work has focused on the development of high peak and average power QCLs emitting at room temperature and above. Scaling of the output is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 μm, over 7 W of peak power has been demonstrated at room temperature for a single diode, with an average power of 300 mW at 6% duty cycle. At shorter wavelengths, laser development includes the use of highly strain-balanced heterostructures in order to maintain a high conduction band offset and minimize leakage current. At λ = 6 μm, utilizing a high reflective coating and epilayer-down mounting of the laser, we have demonstrated 225 mW of average power from a single facet at room temperature. Lastly, these results are put in perspective of other reported results and possible future directions are discussed.

Citation Download Citation

Manijeh Razeghi and Steven Slivken "High-power quantum cascade lasers (QCLs) grown by GasMBE", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519745

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