Translator Disclaimer
22 October 2003 Kinetics of photoluminescence of porous silicon studied by photo-luminescence excitation spectroscopy and time-resolved spectroscopy
Author Affiliations +
Abstract
Photoluminescence (PL) spectra and excitation spectra (PLE) (under steady-state conditions), time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range (under pulsed operation) at different temperatures (10 K-room) on anodically etched boron-doped silicon are presented. PLE shows that visible PL is excited by light from UV region. PL and PL-TRS exhibit multiband structure and can be decomposed as a sum of few Gaussians. PL-DCs have multiexponential shape. Relaxation times depend on wavelength of the observation. To explain our results we assumed a model in which the multibarrier structure is formed by larger Si crystallites or wires (quantum well) surrounded by Si crystallites with diameters in the nanometer range (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in a quantum well.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zbigniew Lukasiak, P. Dalasinski, and Waclaw Bala "Kinetics of photoluminescence of porous silicon studied by photo-luminescence excitation spectroscopy and time-resolved spectroscopy", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.518789
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top